Work

Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

Year: 2015

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-015-3713-9

Authors: J. Wenisch, W. Schirmacher, R. Wollrab, D. Eich, S. Hanna, R. Breiter, H. Lutz, H. Figgemeier

Institution: AIM Infrarot-Module (Germany)

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013370157

FWCI: 0.643

Cites: 7

Cited by: 11

Related to: 10