Work

Room temperature 632.7 nm CW operation of AlGaInP strained multiquantum well lasers grown on (100) GaAs

Year: 1992

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19920396

Authors: I. Yoshida, T. Katsuyama, J. Hashimoto, Y. Taniguchi, H. Hayashi

Institution: Sumitomo Electric Industries (Japan)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013371501

FWCI: 1.854

Cites: 3

Cited by: 9

Related to: 10