Work

High quality gate insulator film formation on SiC using by microwave-excited high-density plasma

Year: 2007

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2007.01.076

Authors: Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Institutions: Tohoku University, New Industry Creation Hatchery Center, Tohoku University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013377188

FWCI:

Cites: 8

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Related to: 10