Work

The effects of annealing encapsulant and ambient on the barrier height of WNx/GaAs contact and self-aligned gate field effect transistor fabrication

Year: 1988

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

DOI: 10.1116/1.584156

Authors: S. K. Cheung, S. P. Kwok, A. Kaleta, K. M. Yu, J. M. Jaklevic, C. L. Liang, N. W. Cheung, E. E. Haller

Institution: University of California, Berkeley

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013406473

FWCI: 0.776

Cites:

Cited by: 8

Related to: 10