Work

High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

Year: 2012

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4705375

Authors: Yanli Liu, Dunjun Chen, Junjun Xue, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng, Ke Xu, Jinping Zhang, Bentao Cui, Andrew M. Wowchak, Amir M. Dabiran

Institutions: Nanjing University, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, SVT Associates (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013455583

FWCI: 0.321

Cites: 18

Cited by: 5

Related to: 10