Work

Transit time reduction in AlGaAs/GaAs HBTs with p-type collector

Year: 1988

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.8866

Authors: K. Morizuka, R. Katoh, M. Asaka, N. Iizuka, K. Tsuda, M. Obara

Institution: Toshiba (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013517261

FWCI: 1.944

Cites: 1

Cited by: 4

Related to: 10