Work

Monodisperse GaN nanowires prepared by metal-assisted chemical etching with in situ catalyst deposition

Year: 2012

Type: article

Source: Electrochemistry Communications

DOI: 10.1016/j.elecom.2012.03.011

Authors: Xuewen Geng, Barrett K. Duan, Dane A. Grismer, Liancheng Zhao, Paul W. Bohn

Institutions: University of Notre Dame, Harbin Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013564056

FWCI: 1.614

Cites: 21

Cited by: 51

Related to: 10