Work

InP HBT Transferred to Higher Thermal Conductivity Substrate

Year: 2012

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2185920

Authors: Dennis W. Scott, Cedric Monier, Sujane Wang, Vesna Radisic, Phuong Nguyen, Abdullah Cavus, William R. Deal, Augusto Gutierrez-Aitken

Institution: Northrop Grumman (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2013933530

FWCI: 1.2

Cites: 9

Cited by: 20

Related to: 10