Work

A new technique to extract the gate bias dependent s/d series resistance of sub-100nm MOSFETs

Year: 2009

Type: conference-paper

Abstract: In this study, a new technique to extract the S/D series resistance (Rsd) from the total resistance versus transconductance gain plot Rtot(1/β) is proposed. The technique only requires the measurement of Id(Vgs)|Vgtand β, allowing fast and statistical analysis in an industrial context. Unlike the usual Rtot(L)-based techniques, it has the advantage of being insensitive to the channel length and mobility variations and finally enables to extract very accurate values for Rsd(Vgs) and the effective mobility reduction factor µeff(Vgt)/µeff(0).

Source: International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

DOI: 10.1109/vtsa.2009.5159314

Authors: Dominique Fleury, Antoine Cros, Gregory Bidal, Hugues Brut, Emmanuel Josse, Gerard Ghibaudo

Institutions: Institut polytechnique de Grenoble, STMicroelectronics (France), Institut de Microélectronique, Electromagnétisme et Photonique, Institut Néel, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2013991872

FWCI: 0.937

Cites:

Cited by: 10

Related to: 10