Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.
Year: 2009
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.3089215
Authors: M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2014031909