Work

High index orientation effects of strained self-assembled InGaAs quantum dots

Year: 1996

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.588902

Authors: D. I. Lubyshev, P. P. González-Borrero, E. Marega, E. Petitprez, P. Basmaji

Institutions: Universidade de São Paulo, Instituto de Física de São Carlos

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

OpenAlex ID: W2014074433

FWCI: 7.201

Cites:

Cited by: 73

Related to: 10