Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate
Year: 2008
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.3050522
Institutions: Chinese Academy of Sciences, Institute of Microelectronics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2014475982