Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology
Year: 2012
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.4716030
Authors: F. Fournel, L. Continni, C. Morales, J. Da Fonseca, H. Moriceau, F. Rieutord, A. Barthelemy, I. Radu
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2014615801