Low-Temperature Sintering and Microstructure of Mg4(Nb2-xVx)O9Microwave Dielectric Ceramic by V Substitution for Nb
Year: 2003
Type: article
Abstract: The effects of microstructure on the microwave dielectric properties of Mg 4 Nb 2 O 9 (MN) were investigated and the possibility of low-temperature sintering of Mg 4 (Nb 2- x V x )O 9 (MNV) by V substitution for Nb was also discussed in this study. The quality factors ( Q · f ) of MN ranged from 10338 to 217390 GHz with increasing sintering temperatures up to 1300°C, resulting in the grain growth and densification of the samples. In the case of V substitution for Nb, it was found that the limit of the solid solution is lower than x =0.125; the improvements in the sinterability and apparent density of MNV at x =0.0625 were recognized at the sintering temperature of 1025°C. The dielectric constants ( ε r ) and the Q · f values of MNV at x =0.0625 sintered at 1025°C were 11.6 and 160256 GHz, respectively. Thus, it was clarified that a small amount of V substitution for Nb is effective in reducing the sintering temperatures and improving the microwave dielectric properties of MNV.
DOI: 10.1143/jjap.42.6154
Institutions: Meijo University, Nagoya Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2014914261