Work

Electron traps in InGaP grown by gas source molecular beam epitaxy

Year: 1993

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.355330

Authors: H. S. Kim, M. J. Hafich, G. A. Patrizi, A. Nanda, T. J. Vogt, L. M. Woods, G. Y. Robinson

Institution: Colorado State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2014965397

FWCI: 0.982

Cites: 13

Cited by: 10

Related to: 10