The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures
Year: 2004
Type: article
Authors: A. Asgari, M. Kalafi, L. Faraone
Institutions: University of Tabriz, The University of Western Australia
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: Australian Research Council
OpenAlex ID: W2015014649