Year: 2008
Type: article
Abstract: Single crystal, heteroepitaxial growth of icosahedral B12As2 (IBA, a boride semiconductor) on m-plane 15R-SiC is demonstrated. Previous studies of IBA on other substrates, i.e., (111)Si and (0001)6H-SiC, produced polycrystalline and twinned epilayers. In contrast, single-crystalline and untwinned IBA was achieved on m-plane 15R-SiC. Synchrotron white beam x-ray topography, Raman spectroscopy, and high resolution transmission electron microscopy confirm the high quality of the films. High quality growth is shown to be mediated by ordered nucleation of IBA on (474) substrate facets. This work demonstrates that m-plane 15R-SiC is a good substrate choice to grow high-quality untwinned IBA epilayers for future device applications.
Source: Applied Physics Letters
DOI: 10.1063/1.2945635
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2015025404