Work

Infrared spectroscopy study of the Si–SiO2 interface

Year: 1996

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.117780

Authors: Yasutoshi Okuno, Kyung-ho Park

Institution: Texas Instruments (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015136368

FWCI:

Cites:

Cited by: 5

Related to: 10