Work

Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE

Year: 1998

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/s0921-5107(97)00266-3

Authors: Hisao Nakashima, Takehiko Kato, Kenzo Maehashi, Takehiro Nishida, Yoshiji Inoue, Toshikazu Takeuchi, Koichi Inoue, Peter Fischer, Jürgen Christen, Marius Grundmann, Dieter Bimberg

Institutions: The Institute of Scientific and Industrial Research, The University of Osaka, Otto-von-Guericke-Universität Magdeburg, Technische Universität Berlin

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2015144241

FWCI: 0.244

Cites: 8

Cited by: 2

Related to: 10