Work

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Year: 2010

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.645-648.171

Authors: Jean Lorenzzi, Georgios Zoulis, Olivier Kim-Hak, Nikoletta Jegenyes, Davy Carole, François Cauwet, Sandrine Juillaguet, Gabriel Ferro, Jean Camassel

Institutions: Lyon 1 Université, Centre National de la Recherche Scientifique, Université Montpellier 2, Université de Lyon, Université de Montpellier

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015194591

FWCI: 2.017

Cites: 3

Cited by: 10

Related to: 10