Work

Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate

Year: 2012

Type: article

Abstract: A silicon dioxide film on a silicon substrate is the most essential element in semiconductor devices and various advanced materials. We have elucidated the atomic structure of SiO2 films using low-dose scanning transmission electron microscopy (STEM). We have visualized a metastable crystalline SiO2 layer near a silicon substrate, which was not revealed in previous studies probably due to the vitrification caused by electron irradiation. Our experimental results also suggest a crystallographic nature of various surface oxides.

Source: AIP Advances

DOI: 10.1063/1.4768269

Authors: Koji Kimoto, Hiroki Tanaka, Daisuke Matsushita, Kosuke Tatsumura, Shiro Takeno

Institutions: National Institute for Materials Science, Japan Science and Technology Agency, Toshiba (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

OpenAlex ID: W2015200280

FWCI: 0.409

Cites: 26

Cited by: 14

Related to: 10