Work

Ga0.72Al0.28As/Ga0.99Be0.01As heterojunction bipolar transistor grown by molecular beam epitaxy

Year: 1986

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/edl.1986.26317

Authors: J.L. Lievin, C. Dubon-Chevall, F. Alexandre, G. Leroux, J. Dangla, D. Ankri

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015286141

FWCI: 3.681

Cites: 7

Cited by: 33

Related to: 10