Work

Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer

Year: 2014

Type: article

Source: Current Applied Physics

DOI: 10.1016/j.cap.2014.09.027

Authors: Heewang Yang, Byungsu Cho, Joohyun Park, Seokyoon Shin, Giyul Ham, Hyungtak Seo, Hyeongtag Jeon

Institutions: Hanyang University, Samsung (South Korea), Samsung Display (South Korea), Ajou University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015587878

FWCI:

Cites: 14

Cited by: 2

Related to: 10