Work

Carrier lifetimes in MBE and MOCVD InGaAs quantum wells

Year: 1993

Type: article

Abstract: Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 mu m. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6*10 17 cm -3 .

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/8/2/025

Authors: J E Ehrlich, D T Neilson, A C Walker, G T Kennedy, R S Grant, W Sibbett, M Hopkinson

Institution: Heriot-Watt University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2015708187

FWCI: 2.457

Cites: 15

Cited by: 24

Related to: 10