Work

Corner effects in SOI-Tri gate FinFET structure by using 3D Process and device simulations

Year: 2010

Type: conference-paper

Source: IEEE International Conference on Computer Science and Information Technology

DOI: 10.1109/iccsit.2010.5565081

Authors: M. Pavan Kumar, Santosh Kr. Gupta, Madhumita Paul

Institution: National Institute Of Technology Silchar

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015761815

FWCI: 2.139

Cites: 6

Cited by: 8

Related to: 10