Work

Steady state and transient thermal analyses of GaAs pHEMT devices

Year: 2012

Type: conference-paper

Source: The ... IEEE Annual Wireless and Microwave Technology Conference

DOI: 10.1109/wamicon.2012.6208438

Authors: Bryan K. Schwitter, Michael C. Heimlich, Anthony P. Fattorini, Jabra Tarazi

Institution: Macquarie University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015904313

FWCI: 3.421

Cites: 13

Cited by: 6

Related to: 10