Work

XRD characterization of ZnO layers grown on GaAs(111)B, c‐plane and a‐plane sapphire substrates by plasma‐assisted MBE

Year: 2010

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200983209

Authors: Tsutomu Muranaka, Tatsumi Sakano, Keiichi Mizuguchi, Yoichi Nabetani, Tetsuya Akitsu, Takashi Matsumoto, Shigeru Hagihara, Osamu Abe, Satoshi Hiraki, Yuichiro Fujikawa

Institutions: University of Yamanashi, Yamanashi Prefectural Industrial Technology Center

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015970504

FWCI: 0.42

Cites:

Cited by: 4

Related to: 10