Work

Origin of hexagonal-shaped etch pits formed in (0001) GaN films

Year: 2000

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.126884

Authors: S. K. Hong, T. Yao, B. J. Kim, S. Y. Yoon, T. I. Kim

Institutions: Institute for Materials Research, Tohoku University, Samsung Advanced Institute of Technology (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015993055

FWCI: 4.897

Cites: 17

Cited by: 108

Related to: 10