Fabrication and characterization of GaAs MIS devices with N-rich PECVD SixNy dielectric
Year: 2001
Type: article
Source: Applied Surface Science
Authors: Suparna Pal, D.N. Bose
Institution: Indian Institute of Technology Kharagpur
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016000490