Work

The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

Year: 2004

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2004.09.009

Authors: S. Guessasma, M. Chahdi

Institutions: Université de technologie de belfort-montbéliard, University of Batna 1

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016003292

FWCI: 0.311

Cites: 6

Cited by: 7

Related to: 10