Work

InGaN-Based p–i–n Solar Cells with Graphene Electrodes

Year: 2011

Type: article

Abstract: InGaN-based p–i–n solar cells with graphene electrodes were fabricated and compared with solar cells using indium tin oxide (ITO) electrodes. In particular, we analyzed the properties of graphene film by means of high-resolution transmission electron microscopic (HRTEM) and Raman spectroscopy, also comparing optical properties with those of ITO, conventionally used as transparent electrodes. The solar cells using graphene revealed a short circuit current density of 0.83 mA/cm 2 , an open circuit voltage of 2.0 V, a fill factor of 75.2%, and conversion efficiency of 1.2%, comparable to the performance of solar cells using ITO.

Source: Applied Physics Express

DOI: 10.1143/apex.4.052302

Authors: Jae-Phil Shim, Minhyeok Choe, Seong-Ran Jeon, Dongju Seo, Takhee Lee, Dong-Seon Lee

Institutions: Gwangju Institute of Science and Technology, Korea Photonics Technology Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funders: National Research Foundation, Ministry of Knowledge Economy, National Research Foundation of Korea