Work

Intermediate band solar energy conversion in ZnTeO

Year: 2013

Type: conference-paper

Abstract: Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.

Source: Conference record of the IEEE Photovoltaic Specialists Conference

DOI: 10.1109/pvsc.2013.6744459

Authors: Jamie Phillips, Alan Teran, Chihyu Chen, E. Antolin, I. Ramiro, E. Lopez, E. Hernandez, I. Artacho, C. Tablero, A. Marti, A. Luque

Institutions: University of Michigan, University of Nottingham, Universidad Politécnica de Madrid

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: green

Funders: National Science Foundation, U.S. Department of Energy, Office of Science, Division of Materials Research, Basic Energy Sciences

Awards: G1187550439, Materials World Network: Intermediate Band Semiconductor Materials for High Efficiency Solar Energy Conversion, TAS::89 0227::TAS RECOVERY; NEW: RECOVERY ACT - EFRC: SOLAR ENERGY CONVERSION IN COMPLEX MATERIALS (SECCM) -- EFRC; PI - PETER GREEN, TAS::89 0227::TAS RECOVERY; NEW: RECOVERY ACT - EFRC: SOLAR ENERGY CONVERSION IN COMPLEX MATERIALS (SECCM) -- EFRC; PI - PETER GREEN

OpenAlex ID: W2016102265

FWCI: 1.631

Cites: 8

Cited by: 4

Related to: 10