Work

Characterization of the silicon nitride–thermal oxide interface in oxide–nitride–oxide structures by ELS, XPS, ellipsometry, and numerical simulation

Year: 1998

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/s0026-2714(98)00019-5

Authors: V.A. Gritsenko, S.N. Svitasheva, I.P. Petrenko, Yu.N. Novikov, Yu.N. Morokov, Hei Wong, R.W.M. Kwok, R.W.M. Chan

Institutions: Institute of Semiconductor Physics, Federal Research Center for Information and Computational Technologies, City University of Hong Kong, Chinese University of Hong Kong

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016114667

FWCI: 0.473

Cites: 15

Cited by: 11

Related to: 10