Work

Profiling generation lifetime in an MOS capacitor using a multistep constant-capacitance technique

Year: 1987

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(87)90004-9

Authors: R. Lal, J. Vasi

Institution: Indian Institute of Technology Bombay

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016125717

FWCI: 0.503

Cites: 10

Cited by: 5

Related to: 10