Work

Development of high-side capable thyristors in thin SOI technology

Year: 2013

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2013.6694420

Authors: I. M. Emmerik-Weijland, R. van Dalen, A. B. van der Wal, M. J. Swanenberg

Institution: NXP (Netherlands)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2016141940

FWCI:

Cites: 6

Cited by:

Related to: 10