Work

Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals

Year: 2001

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(01)01294-5

Authors: E. Frayssinet, W. Knap, S. Krukowski, P. Perlin, P. Wisniewski, T. Suski, I. Grzegory, S. Porowski

Institutions: Centre National de la Recherche Scientifique, Institute of High Pressure Physics, Polish Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016155255

FWCI: 1.318

Cites: 13

Cited by: 33

Related to: 10