Work

Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks

Year: 2013

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2013.2275744

Authors: Eugenio Dentoni Litta, Per-Erik Hellstrom, Christoph Henkel, Mikael Ostling

Institution: KTH Royal Institute of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016169372

FWCI: 3.599

Cites: 20

Cited by: 24

Related to: 10