K-band GaInAs/InP channel power HEMTs
Year: 1995
Type: article
Source: Electronics Letters
DOI: 10.1049/el:19950482
Authors: M. Matloubian, T. Liu, L.M. Jelloian, M.A. Thompson, R.A. Rhodes
Institution: HRL Laboratories (United States)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016188899