Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition
Year: 2004
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1719270
Institution: Kyoto Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016190132