Work

Persistent photoconductivity study in very pure InP epilayers

Year: 1989

Type: article

Abstract: The authors present magnetotransport studies on very pure n-type InP epilayers unintentionally doped. From temperature and hydrostatic pressure dependences of the Hall carrier density they deduce the existence of a deep level with activation energy Ed 2 of the order 180 meV and dependent upon pressure. After illumination of the sample with a radiation energy greater and smaller than the InP gap persistent photoconductivity (PPC) is observed and the study of the transient of recombination of excited carriers shows that spatial charge separation is the mechanism responsible for the persistence of the effect. This suggests that the deep centre L 2 is located in the semi-insulator InP substrate.

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/4/4/004

Authors: D Gauthier, B Goutiers, J C Portal, L Dmowski, M Razeghi

Institutions: Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées de Toulouse

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2016194015

FWCI: 0.568

Cites: 4

Cited by: 4

Related to: 10