Work

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Year: 2005

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1899232

Authors: N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado

Institutions: National Institute for Materials Science, University of Tsukuba, The University of Osaka, Semiconductor Leading Edge Technologies, Inc (Japan), Waseda University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016195065

FWCI: 15.68

Cites: 13

Cited by: 161

Related to: 10