All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors
Year: 2014
Type: article
Abstract: All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.
Source: Advanced Materials
Institution: The University of Queensland
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2016334202
