Accurate electrical simulation and design optimization for silicon interposer considering the MOS effect and eddy currents in the silicon substrate
Year: 2012
Type: conference-paper
Institutions: Chinese Academy of Sciences, Institute of Microelectronics
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016389311
