Influences of thin active layer in (GaAl)As double-heterostructure lasers grown by liquid-phase epitaxy
Year: 1984
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.333866
Authors: T. Hayakawa, N. Miyauchi, T. Suyama, S. Yamamoto, H. Hayashi, S. Yano, T. Hijikata
Institution: Sharp Corporation (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2016401426