Work

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Year: 2015

Type: article

Source: Solar Energy Materials and Solar Cells

DOI: 10.1016/j.solmat.2015.03.004

Authors: R. Caballero, J.M. Cano-Torres, E. Garcia-Llamas, X. Fontané, A. Pérez-Rodríguez, D. Greiner, C.A. Kaufmann, J.M. Merino, I. Victorov, G. Baraldi, M. Valakh, I. Bodnar, V. Izquierdo-Roca, M. León

Institutions: Universidad Autónoma de Madrid, Institut de Recerca en Energia de Catalunya, Universitat de Barcelona, Helmholtz-Zentrum Berlin für Materialien und Energie, Belarusian State University of Informatics and Radioelectronics, Consejo Superior de Investigaciones Científicas, Instituto de Óptica "Daza de Valdés", National Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: European Commission, Deutscher Akademischer Austauschdienst, European Social Fund

Awards: INTERNATIONAL COOPERATIVE PROGRAMME FOR PHOTOVOLTAIC KESTERITE BASED TECHNOLOGIES, Training for sustainable low cost PV technologies: development of kesterite based efficient solar cells, G4558718963

OpenAlex ID: W2016409419

FWCI: 3.262

Cites: 46

Cited by: 36

Related to: 10