Work

Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs

Year: 2015

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2015.2395251

Authors: Ales Chvala, Daniel Donoval, Alexander Satka, Marian Molnar, Juraj Marek, Patrik Pribytny

Institution: Slovak University of Technology in Bratislava

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agentúra na Podporu Výskumu a Vývoja

Awards: G4997437728, Monolitická integrácia ochudobňovacích a obohacovacích InAlN/GaN HFET tranzistorov

OpenAlex ID: W2016431042

FWCI: 3.114

Cites: 36

Cited by: 41

Related to: 10