Work

Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor

Year: 2010

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.49.111503

Authors: Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Hirokazu Suzuki, Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

Institutions: Tohoku University, New Industry Creation Hatchery Center, Tohoku University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016589976

FWCI: 0.245

Cites: 13

Cited by: 1

Related to: 10