Work

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Year: 2002

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1430859

Authors: H. P. D. Schenk, P. de Mierry, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, E. Feltin, B. Beaumont, P. Gibart, S. Fernández, F. Calle

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016698703

FWCI: 2.095

Cites: 24

Cited by: 23

Related to: 10