Work

MOS Integrated silicon pressure sensor

Year: 1985

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1985.22099

Authors: H. Tanigawa, T. Ishihara, M. Hirata, K. Suzuki

Institution: NEC (Japan)

Language: English

Topic: Advanced MEMS and NEMS Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016733656

FWCI: 4.887

Cites: 10

Cited by: 51

Related to: 10