Work

Dominant Mobility Modulation by the Electric Field Effect at the LaAlO 3 / SrTiO 3 Interface

Year: 2009

Type: article

Abstract: Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO3/SrTiO3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost 5 times that of the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.103.226802

Authors: C. Bell, S. Harashima, Y. Kozuka, M. Kim, B. G. Kim, Y. Hikita, H. Y. Hwang

Institutions: Japan Science and Technology Agency, The University of Tokyo, Pusan National University

Language: English

Topic: Electronic and Structural Properties of Oxides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Canon Foundation in Europe

OpenAlex ID: W2016787487

FWCI: 7.217

Cites: 23

Cited by: 281

Related to: 10